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  • 专利说明
  • 权利要求
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    • 专利摘要:
    A method for determining a self-assembly pattern (MAA) of a confined block copolymer within a closed contour, said guide contour (CG), comprising the following steps, implemented by computer a) selecting in a database a so-called closed reference contour (CR) approaching said guide contour, an autoassembly pattern of said reference pattern block copolymer (MR) being associated with said reference contour; b) applying a geometric transformation to a plurality of points (P) of said reference pattern to convert them to respective points, called image points (PIM), of the self-assembling pattern to be determined. Computer program product for the implementation of such a method.
    公开号:FR3017475A1
    申请号:FR1451085
    申请日:2014-02-12
    公开日:2015-08-14
    发明作者:Jerome Belledent
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] The invention relates to a computer-implemented method for determining a self-assembling pattern of a block copolymer confined to a block copolymer. inside a closed contour. Directed Self-assembly of Direct Block Copolymers (DSA) is attracting increasing attention as a technology that can achieve nanoscale surface patterns, overcoming of resolution of lithography. In particular, this technique seems well adapted to the realization of patterns of lines (conductive tracks) and holes (VIAs) in the integrated circuits of the next generation. Phase separation of Block Co-Polymers (BCP) forms, by self-assembly, nano-domains in the form of cylinders, spheres or lamellae whose spatial scale varies from a few nanometers to several tens of nanometers. Among these different structures, the cylindrical domains are particularly suitable for producing vias in integrated circuits. According to an approach known as graphoepitaxy, the self-assembly of a BCP is within a guiding contour previously made on a surface. The strong lateral confinement induced by the walls of this guide contour predictably modifies the "natural" free-surface arrangement of the nano-domains (a hexagonal pattern in the case of cylindrical domains perpendicular to the substrate). Thus, it has been proved that the use of a suitable guiding contour allows the realization of an arbitrary arrangement of nano-cylinders, which may correspond to a pattern of vias in an integrated circuit. The guiding contours for graphoepitaxy are typically made by lithography, and have a shape that inevitably has deviations from that desired and defined by the lithography mask. It is therefore necessary to verify that the directed self-assembly pattern obtained from a "real" guide contour - visualized, for example, by scanning electron microscopy - will be sufficiently close to the expected pattern, depending on the intended application. For this, we can use numerical simulations based on physical models of the self-assembly process. These physical models can be separated into two large families: particle models and those based on energy fields. The following publications may be mentioned as non-limiting examples: - For particulate models: - "Dissipative particle dynamics study on directed self-assembly in hales" T. Nakano; Mr. Matsukuma; K. Matsuzaki; Mr. Muramatsu; T. Tomita; T. Kitano Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801J (March 26, 2013) - "Molecular Dynamics Study of the Free Surface Surface on Block Copolymer Thin Film Morphology and Christopher Forrey Alignment," Kevin G. Yager, and Samuel P. Broadaway ACS Nano, 2011, 5 (4), pp 2895-2907 - For models based on energy fields: - "Computational simulation of block copolymer directed self-assembly in small topographical guiding templates" He Yi; Azat Latypov; H.-S. Philip Wong Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801 L (March 26, 2013) - "Large-scale dynamics of directed self-assembly defects on chemically pre-patterned surface" Kenji Yoshimoto; Takashi Taniguchi Proc. SPIE 8680, Alternative Lithographic Technologies V, 868011 (March 26, 2013); All these methods implement iterative algorithms; they are therefore far too slow to be used in the production phase.
    [0002] The object of the invention is to remedy this drawback of the prior art by providing a method for determining a self-assembly pattern of a confined block copolymer within a closed contour that is faster than known methods while being sufficiently precise and predictive. More particularly, the invention aims to provide a sufficiently fast method to be used to determine such self-assembly patterns on the entire surface of an integrated circuit.
    [0003] According to the invention, this object is achieved by means of a method based on a simple geometrical transformation of a "reference" contour, located within a database stored in the memory of a computer. and identified as being closest to the guidance profile considered.
    [0004] Thus, an object of the invention making it possible to achieve this goal is a method of determining a self-assembly pattern of a confined block copolymer within a closed contour, called a guiding contour, comprising the following computer-implemented steps: a) selecting in a database a so-called closed reference contour approaching said guide contour, a self-assembling pattern of said referenced block copolymer being associated with said reference outline; b) applying a geometric transformation to a plurality of points of said reference pattern to convert them to respective points, so-called image points, of the self-assembling pattern to be determined, said geometrical transformation being a function of a geometric transformation allowing to passing from said reference contour to said guide contour. According to various particular embodiments of such a method: said reference pattern may comprise at least a first phase and a second phase, said points of said reference pattern being chosen so as to sample a boundary between said first phase and said first phase; second phase. Said database may contain a plurality of closed contours sampled according to a sampling method; the method comprising a preliminary step of sampling said guide contour according to the same sampling method and with the same number of sampling points as at least some of the closed contours contained in said database. The curvilinear distance between two said sampling points may be, for all the closed contours contained in said database and for said guide contour, between half and twice as long as a predefined length n.sub.0. Said predefined length n.sub.o may be such that 143 / 5sceLo, preferably 1_0 / 2scaLo and even more preferably L0 / 2soo Lo, where Lo is a natural period of said block copolymer. Said step a) may comprise: a1) selecting the closed contours of said base comprising as many sampling points as said guide contour; and a2) selecting, from among the closed contours thus selected, one which minimizes a distance criterion function of the coordinates of the sampling points of said closed contour and said guide contour. Said distance criterion may be a quadratic distance between the complex coefficients obtained by discrete Fourier transform of two complex number vectors representing, respectively, the coordinates of the sampling points of said closed contour and of said guide contour. Said database may contain, for each said closed contour, a set of data defining a triangulation of a surface delimited by said contour, and said step b) may comprise: b1) the determination of a triangulation of a surface defined by said guide contour, each triangle and each vertex of said triangulation being associated with a respective triangle and vertex of said triangulation of the surface delimited by the reference contour; and b2) for a plurality of points of said reference pattern, each of which is contained in a triangle of said triangulation of the reference contour bounded surface, determining an image point contained in the associated triangle of said triangulation of the surface defined by said guide contour. Each said point of said reference pattern and its image point may have, relative to the triangles in which they are respectively contained, the same barycentric coordinates. Said step b2) may also comprise: b2 ') for each or at least one of said points of said reference pattern, the construction of at least one additional triangle containing said point and whose vertices are situated on said reference contour; The image point of said or each said point of the reference pattern having, relative to the triangle of which it is contained, barycentric coordinates obtained by linear combination of the barycentric coordinates of said point of the reference pattern with respect to the triangles in which it is contained . The triangulations of said contours can be performed by taking, as vertices, at least a part of said sampling points. Such a method may also include the following step: c) using a self-assembly template of said block copolymer to determine said self-assembly pattern, taking said image points as initialization data. Another object of the invention is a computer program product comprising program code instructions for performing the steps of such a method when said program is run on a computer. Other features, details and advantages of the invention will be apparent from the description given with reference to the accompanying drawings given by way of example in which: FIG. 1A is the image in scanning electron microscopy a guide contour and the associated self-assembly pattern; - Figure 1B shows the same contour sampled with its triangulation; FIGS. 2A-2G represent respective reference profiles that can be stored in a database; FIG. 3 illustrates the use of additional triangles in a method according to a particular embodiment of the invention; and - Figure 4 illustrates the technical result of the invention. The invention will be described by way of examples in which the block copolymer considered is of the cylindrical PS-b-PMMA type (that is to say forming by self-assembly of the nano-cylinders). However, the invention can be applied to other types of block copolymers (diblocks, star triblocks or of linear structure, etc.) and to mixtures of such copolymers. There is also no restriction on the type of graphoepitaxy process used ("solvent annealing", ie "solvent vapor annealing", "grafting layer", that is, say "graft layer" etc ...). FIG. 1A illustrates a scanning electron microscopy image of a MAA self-assembly pattern of a block copolymer (PS-bPMMA) confined by a closed trilobal shape CG closed contour. This pattern comprises a first continuous phase (reference PH1 in FIG. 1B) and a second discrete phase (reference PH2 in FIG. 1B) formed by three cylinders (C1, C2 and C3 in FIG. 1B). The image is scanned and acquired by a computer. Then, as shown in FIG. 1B, the CG contour is sampled. In the present case, the sampling is regular, that is to say with sampling points PE arranged substantially equidistant from each other along the contour. For computational efficiency reasons which will be explained later, it is preferable that the number of sampling points is a power of 2 - here 16 = 24. The points are ordered by traversing the contour in the trigonometrical direction. The reference CG 'corresponds to the polygon, whose vertices coincide with the sampling points, which approaches the guiding contour (discretized contour). The boundaries of the cylindrical domains C1, C2 and C3 are also sampled, although this is not shown in the figure.
    [0005] Then, a triangulation of the surface delimited by the contour CG (or, more exactly, by the discretized contour CG ') is defined by taking the sampling points E as vertices of the triangles. The reference Tm in FIG. 1B identifies one of these triangles.
    [0006] A plurality of discretized images of the type of FIG. 1B, corresponding to different contours guiding the self-assembly of the same block copolymer, are stored in the memory of the computer to form a database, or bookstore. These images can correspond to real samples or be obtained from physical models of high precision. Figures 2A to 2G show the images of such a database. In the database, each image may be represented by: The coordinates of the PE sampling points of the guide contour; in particular, each sampling point can be represented by a complex number z = x + jy, where "j" is the imaginary unit and (x, y) the Cartesian coordinates of the sampling point. - Data identifying the triangulation; for example, each triangle can be identified by three integers identifying the sampling points serving as its vertices. The coordinates of the sampling points P (see FIG. 2A) of the boundaries of the cylindrical domains (more generally, the boundaries between distinct phases of the self-assembly motif). More particularly, each of these points can be identified by its barycentric coordinates in the triangle containing it, as well as by an identifier of this triangle. As will be explained below, using FIG. 3, the same point P can be inside several triangles, in which case several sets of barycentric coordinates can be stored in the database. It will be recalled that the barycentric coordinates of a point with respect to a triangle are the weights (possibly negative, if the point in question is outside the triangle) that must be given to the vertices of said triangle so that said point in the center of gravity. - The Fourier transform of the sampled contour can also be stored in the database, which avoids having to calculate it later. As explained above, each sampling point can be identified by a complex number; thus the discretized contour CG 'is represented by a complex vector whose Fourier transform can be calculated. The reason why a number of sampling points equal to a power of two is preferably chosen is that it makes it possible to use the Fast Fourier Transform (FFT) algorithm. Advantageously, the curvilinear distance between two sampling points is approximately the same for all the images of the database, and more precisely is between half and twice as long as a reference length n / a. More particularly, it can be imposed that the distance "s" between an arbitrary pair of adjacent sampling points satisfies the inequality Is-se0.4.so. The reference length is preferably of the same order of magnitude of the natural period Lo of the copolymer, that is to say the distance between domains (for example cylindrical) in case of free self-assembly, not constrained by a guiding outline, copolymer. For example one can have 143 / 5sceLo, more particularly 1_0 / 2scaLo and more particularly still L0 / 2so Lo, and as a particular example so = Lo. The number of sampling points of a contour of length L can then be given by: log - so log (2) N = 2 where "E" is the function "integer part". For the implementation of a method according to the invention, it is preferable, for reasons which will become apparent thereafter, that the numbering of the sampling points is not arbitrary. E 0,5+ For this, a particular guide contour is pre-centered so that its center of gravity "g" is placed at the origin of a Cartesian coordinate system. Then, the contour is sampled in the trigonometric direction. As explained above, the set of resulting sampling points then consists of complex numbers s = (C> `Ci such that the curvilinear distance separating them equal to = 2, where) 1KN are the values of the (Ci) 1 <i <N discrete Fourier transform of (and "Arg" is the function giving the argument of a complex number.) It should be noted that (9 ° is the orientation of the major axis of the ellipse approaching the contour The triangulation of the surface delimited by the guide contour thus sampled can then be carried out in the following manner: - The first triangle T1 has for vertices the points pl = ci, 15 qi = C2 etri = cN - The triangles (T2,) 1 <, <L2 have for vertices the points 2 fold = Ci + 1 q2i = Ci + 2 and r2i = C - The triangles (T2, -A <, <A_2 have the vertices the points 2 P 2i + 1 = C i + 2, q 2i + 1 = CN-i and r 2i + 1 = C N-i + 1 - 20 It may be interesting to note that this triangulation is not, in general, a triangulation Delaunay, except if the polygon CG 'is convex. If the triangulation is not Delaunay, it is possible that triangles are superimposed, and that therefore a particular point of the MAA pattern is contained and such that the x-axis and the vector gC1 form an angle between them (Arg tê2 Arg (CN)) in several triangles. This does not matter for the implementation of the method of the invention. Once the database is formed, the problem arises of determining the self-assembly pattern of the same copolymer within a guide contour other than those contained in the base. To do this, this contour (without the copolymer inside) must be sampled as explained above; the number N of contour sampling points must be the same as for at least part of the database. A triangulation of the surface delimited by this contour must also be determined in the same way as during the construction of said database. Next, it is necessary to determine, from among the contours stored in the database with N sampling points, which one is closest to the guiding contour for which the self-assembly pattern is to be determined; the contour thus determined will be called "reference contour" in the following. To do this, it is necessary to define a criterion of similarity between outlines. Advantageously, but not in a limiting manner, it may be the quadratic distance between the Fourier coefficients of the contours: ## EQU1 ## where Ci is the i-th Fourier coefficient of the guiding contour to be characterized and Fi that of outline of the database to which it is compared. The discrete Fourier transform of a contour is calculated as explained above, by representing each sampling point by a complex number. The numbering of the sampling points must follow a criterion common to all contours (for example, but not limited to the one explained above) in order to make the quadratic distance thus calculated meaningful. It should be noted that information about contour rotation and origin of sampling is contained in the Fourier spectrum phase. They are therefore not taken into account when comparing the contours, which is desirable. In other words, we apply a double filtering to the database: first we preselect the contours which have a length close to that of the contour to be characterized (by counting the number of sampling points), then we select a single reference contour by applying an appropriate similarity criterion. Once the reference contour is found in the library, the guide to be characterized is rotated so as to minimize the distance between the two sets of sampling points. This position can be obtained with a good approximation by applying a rotation angle equal to that formed by the gel vectors and g'c'i, g 'being the center of gravity of the reference contour. At this point, one can proceed to the geometric transformation that converts the self-assembly pattern associated with the reference contour ("reference pattern") - known and stored in the database - into a pattern approaching that which will be obtained by performing the self-assembly of the same block copolymer within the guide contour to be characterized. This geometric transformation is based on the triangulations, and more precisely on the fact that each sampling point of the contour to be characterized is associated with ("is the image of") a respective sampling point of the reference contour, and each triangle of the triangulation of the surface delimited by the contour to be characterized is associated with a respective triangle of the triangulation of the area delimited by the reference contour. Thus, it will be possible to identify a plurality of points of the reference pattern, to determine the triangle in which each of these points is contained and to associate it with an image point contained in the associated triangle of the triangulation of the surface delimited by the contour to be characterized. More particularly, a point of the reference pattern can be characterized by its barycentric coordinates (a, 13, y) with respect to the triangle containing it, and its image point by identical barycentric coordinates (alm, 131m, yΔI) = (a , 13, y) relative to the associated triangle. Determining in which triangle is a given point of the reference pattern does not pose any particular difficulty. For example one can travel sequentially all triangles by calculating the barycentric coordinates of the point with respect to each said triangle and stop when (1 + 13 + 7 = 1 with a, 13 and between 0 and 1. It is possible at this stage to store this information in the database In the interest of efficiency, it is appropriate to apply this geometric transformation only to sampling points of the boundary of the cylindrical domains (more generally: from the border between phases) in the reference pattern (point "P" in Fig. 2A) because the knowledge of these points is sufficient to reconstruct an approximate self-assembly pattern.
    [0007] One difficulty arises from the fact that the characteristic length scale of the triangulation which serves as a basis for the geometrical transformation is generally smaller than the length of the guiding contour wall influencing the positioning of the cylindrical domains formed by the self-assembly of the copolymer. The present inventor has thus realized that it is advantageous to use also additional triangles with larger base lengths (not having two vertices constituted by adjacent sampling points) during the geometrical transformation. In particular, it has been found that a number of triangle nbTri = 3 is generally satisfactory.
    [0008] The additional triangles associated with the triangle Tm of the triangulation can be in even numbers and be defined as follows: If m = 2i + 1 is odd ("i" being an integer): The additional triangle Tm, 2k has for vertex the points P m, 2k = C i + 2-kgm, 2k = C i + 2 + k and m'2k r = C Ni The additional triangle Tm, 2k + 'has for vertex the points Pm, 2k + 1 = C1 + 2 m, 2k = C Nik and rm, 2k - CN-i + 1 + k If m = 2i is even: The additional triangle Tm, 2k has for vertex points P m, 2k = C i + lk gm, 2k = C i + 2 + ket rm 2k = C N-i + 1 2k + 1 The additional triangle Tm, has for vertex the points P m, 2k + 1 = C i + 1 m, 2k = C N-i + lk and rm, 2k = C N-i + 1 + k with k between 1 and (nbTri - 1) / 2. In the formulas above, it is possible that the indices of points c are not between 1 10 and N. In this case, the triangle can not be constructed and a set of restricted barycentric coordinates will be used. FIG. 3 shows a point Pm situated inside a triangle Tm forming part of the triangulation of the reference contour CR, as well as two additional triangles Tm, 2 and Tm, 3. In this case, nbTri = 3.
    [0009] If additional triangles are used, the geometric transformation must be redefined. If we consider a point P of the reference pattern MR contained in nbTri triangles (a triangle Tm belonging to the triangulation and nbTri-1 additional triangles), the image point will be in the triangle of the triangulation of the contour to be characterized associated with Tm and its 20 barycentric coordinates with respect to this triangle will be given by a weighted average of the barycentric coordinates in the different triangles of the reference contour. The weighting coefficients will typically be chosen such that the image of a point on the reference contour is on the contour to be characterized.
    [0010] Any point P of the guide lying in the triangle Tn41 has the image of the point PIM such that: ## EQU1 ## P 1 PIM; - The index "k" identifies the nbTri triangles Tk containing the point P - typically a triangle belonging to the triangulation of the surface delimited by the reference contour and (nbTri-1) additional triangles; Pk, qk and rk are the complex numbers representing the Cartesian coordinates of the vertices of the triangle Tk; - Ctk, 13k, 7k and ai, Ri, y are respectively the barycentric coordinates of the point P in the triangles Tk and TI. In the case nbTri = 1 (which means that there are no additional triangles) the equation above is simplified as follows: PPIM al) + q 2 / r. The right part and the left part of FIG. 4 show, respectively, a guiding outline CG to be characterized and the corresponding reference contour CR, with the associated reference pattern MR. The boundaries of the two cylindrical domains contained in this reference pattern MR are sampled; one of the sampling points is identified by the reference P. A geometric transformation as described above, with nbTri = 3, was applied to find the image points of these sampling points inside the contour CG to characterize; for example, the reference PIM identifies the image point of the aforementioned point P. In the right-hand part of the figure, the MAAc reference identifies the calculated self-assembly pattern formed by all the image points of the sampling points of the boundaries of the cylindrical domains of the reference pattern. We can verify that this calculated motif is very close to the "true" MAA self-assembly motif, determined here experimentally (but we could also have used a physical model). Optionally, it is possible to use the calculated MAAC self-assembly pattern to initialize a self-assembly modeling algorithm; in this case, we can expect the latter to converge in a few iterations only. It may be for example a physical modeling algorithm. Several variants of the process which has just been described may be envisaged without departing from the scope of the present invention. For example, other similarity criteria than the quadratic distance between the Fourier coefficients of the contours. Also, it is possible to envisage the use of two different samples of each contour, one intended for measuring the similarity between contours and the other for triangulation. At the sampling level itself, different methods can be used as long as the same method is used for the reference contours and the contour to be studied. Such a sampling method must in particular make it possible to identify N points on the contour and to fix the position of the first point on this contour as well as a direction of circulation on the contour. Moreover, the relation between a point of the pattern of reference and its image point in the calculated self-assembly pattern may not be based on the barycentric coordinates of the points. It may be, more generally, any relationship resulting from a geometric transformation function of the geometric transformation to move from the reference contour to the guide contour considered.
    权利要求:
    Claims (13)
    [0001]
    REVENDICATIONS1. A method for determining a self-assembly pattern (MAA) of a confined block copolymer within a closed contour, said guide contour (CG), comprising the following steps, implemented by computer: a) select in a database a so-called closed reference contour (CR) approaching said guide contour, a self-assembling pattern of said reference pattern block copolymer (MR) being associated with said reference contour ; b) applying a geometric transformation to a plurality of points (P, Pm) of said reference pattern to convert them to respective points, called image points (PIM), of the self-assembly pattern to be determined, said geometric transformation being a function a geometrical transformation for passing said reference contour to said guide contour.
    [0002]
    The method of claim 1 wherein said reference pattern comprises at least a first phase (PH1) and a second phase (PH2), said points of said reference pattern being selected to sample a boundary between said first phase and said second phase.
    [0003]
    3. Method according to one of the preceding claims wherein said database contains a plurality of closed contours sampled according to a sampling method; the method comprising a preliminary step of sampling said guide contour according to the same sampling method and with the same number of sampling points (PE) as at least some of the closed contours contained in said database.
    [0004]
    4. The method of claim 3 wherein the curvilinear distance between said two sampling points is, for all closed contours contained in said database and for said guide contour, between half and twice a length. predefined so.
    [0005]
    5. The method according to claim 4, wherein said predefined length n.sub.o is such that 10.sup.-5 / 0.5Lo, preferably 10.sup.-2 / 2.sup.a.sub.Lo and even more preferably 10.sub.o / 2.sub.soL.sub.o, where Lo is a natural period of said block copolymer.
    [0006]
    6. Method according to one of claims 3 to 5 wherein said step a) comprises: a1) the selection of the closed contours of said base having as many sample points as said guide contour; 15 and a2) the choice, from among the closed contours thus selected, of that which minimizes a distance criterion function of the coordinates of the sampling points of said closed contour and of said guide contour. 20
    [0007]
    7. The method according to claim 6, wherein said distance criterion is a quadratic distance between the complex coefficients obtained by discrete Fourier transform of two complex number vectors representing, respectively, the coordinates of the sampling points of said closed contour and said contour. guidance. 25
    [0008]
    8. Method according to one of the preceding claims wherein said database contains, for each said closed contour, a set of data defining a triangulation of a surface delimited by said contour, and wherein said step b) comprises: 0 b1) determining a triangulation of a surface delimited by said guide contour, each triangle (Tm) and each vertex of said triangulation being associated with a respective triangle and vertex of said triangulation of the surface delimited by the contour reference ; and b2) for a plurality of points of said reference pattern, each of which is contained in a triangle of said triangulation of the surface delimited by reference contour, the determination of an image point contained in the associated triangle of said triangulation of the surface defined by said guide contour.
    [0009]
    9. The method of claim 8 wherein each said point of said reference pattern and its image point have, relative to the triangles in which they are respectively contained, the same barycentric coordinates.
    [0010]
    The method of claim 8 wherein said step b2) further comprises: b2 ') for each or at least one of said points of said reference pattern, constructing at least one additional triangle (Tm, 2; Tm, 3 ) containing said point (Pm) and whose vertices are situated on said reference contour; The image point of said or each said point of the reference pattern having, relative to the triangle of which it is contained, barycentric coordinates obtained by linear combination of the barycentric coordinates of said point of the reference pattern with respect to the triangles in which it is contained . 25
    [0011]
    11. Method according to one of claims 8 to 10 when dependent on claim 3 wherein the triangulations of said contours are made by taking, as vertices, at least a portion of said sampling points. 30
    [0012]
    12. Method according to one of the preceding claims also comprising the following step: c) using a self-assembly model of said block copolymer to determine said self-assembly pattern, by taking said image points as data initializing.
    [0013]
    A computer program product comprising program code instructions for performing the steps of a method according to one of the preceding claims when said program is run on a computer.
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    同族专利:
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    FR3017475B1|2014-02-12|2016-03-04|Commissariat Energie Atomique|METHOD FOR DETERMINING A SELF-ASSEMBLING PATTERN OF A BLOCK COPOLYMER|
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    申请号 | 申请日 | 专利标题
    FR1451085A|FR3017475B1|2014-02-12|2014-02-12|METHOD FOR DETERMINING A SELF-ASSEMBLING PATTERN OF A BLOCK COPOLYMER|FR1451085A| FR3017475B1|2014-02-12|2014-02-12|METHOD FOR DETERMINING A SELF-ASSEMBLING PATTERN OF A BLOCK COPOLYMER|
    US15/114,514| US10255298B2|2014-02-12|2015-02-10|Method for defining a self-assembling unit of a block copolymer|
    EP15704776.2A| EP3105693B1|2014-02-12|2015-02-10|Method for defining a self-assembling unit of a block copolymer|
    JP2016551283A| JP2017508286A|2014-02-12|2015-02-10|Method for defining self-organizing units of block copolymers|
    PCT/EP2015/052798| WO2015121269A1|2014-02-12|2015-02-10|Method for defining a self-assembling unit of a block copolymer|
    KR1020167023672A| KR20160123315A|2014-02-12|2015-02-10|Method for defining a self-assembling unit of a block copolymer|
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